Low internal resistance MOSFET|Hyperjunction MOSFET|Medium and low voltage SGT MOSFETs|High voltage planar MOSFET|Dedicated for PD chargers|SiC power device-BT Semiconductor Inc.

Resistance to current shock
The product has sufficient margin for anti surge current design. IDM indicators can reach more than 5 times the ID indicators
Low internal resistance
Under the same area, lower RDSON indicators are obtained through advanced manufacturing processes
High reverse withstand voltage
High grade materials are used and sufficient design allowance is made to ensure that the product's withstand voltage can be more than 20% higher than the nominal value. Stronger resistance to impulse voltage.
Have a smaller volume
Benefiting from improvements in chip design and manufacturing processes. Products with the same parameters can be placed in a smaller package shape, reducing the PCB area.

Address：B401-2,Building A3,Guangming Science Park,China Merchants Bureau,Fenghuang Community Sightseeing Road,Fenghuang Street,Guangming District,Shenzhen
E-mail：sales@bote-semi.com

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