Low internal resistance MOSFET|Hyperjunction MOSFET|Medium and low voltage SGT MOSFETs|High voltage planar MOSFET|Dedicated for PD chargers|SiC power device-BT Semiconductor Inc.

Resistance to current shock

The product has sufficient margin for anti surge current design. IDM indicators can reach more than 5 times the ID indicators

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Address：B401-2,Building A3,Guangming Science Park,China Merchants Bureau,Fenghuang Community Sightseeing Road,Fenghuang Street,Guangming District,Shenzhen
E-mail：sales@bote-semi.com

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