Technical introduction:

Shielded Gate Trench MOSFET power device is an advanced shielded shielded gate trench power device designed to significantly reduce the Miller capacitance through the introduction of a polycrystalline silicon field plate, while using the charge sensing effect of a thick oxide layer, After introducing depletion on the basis of the traditional vertical depletion of the Trench MOSFET (p-body/n-epi junction), introducing a new electric field peak at the bottom of the deep Trench, thus changing the field in the drift region from a triangular distribution to an approximate rectangular distribution, reducing the resistance in the drift region while achieving the same breakdown voltage. Thus, the unit area on-off resistance of the device is significantly reduced.

Product features:

1. Lower on-resistance Ronsp

2. Faster switching speed

3. Lower drive loss

4. More advanced terminal design, further improving reliability

Main application fields:

1. Wireless charging

2、DC-DC 

3. Motor drive

4. UAV

5. Switching power supply

6、BMS    

7. Synchronous rectification